Electronic and Electrical Engineering: Fully Funded EPSRC and Swansea PhD Scholarship

Cubic boron arsenide (c-BAs) is emerging as a revolutionary semiconductor exhibiting a remarkably close electron mobility of 1400 cm2/Vs (1400 cm2/Vs for silicon) and hole mobility of about 2100 cm2/Vs (450 cm2/Vs for silicon), at room temperature. While the electron mobility is comparable to silicon, the hole mobility is substantially larger. Additionally, the c-BAs measured … Read more